Wafer grinding is a critical process in the semiconductor industry. There are several types of processing methods, including Mechanical backgrinding, Poligrind, Chemical mechanical planarization, and Coarse grinding. Let’s discuss the differences between these techniques. Here, you’ll learn about the most important ones. After reading this article, you’ll be better equipped to choose the right one for your application. Whether you need a high-quality surface or a precise finish, we can help you.
Mechanical back grinding
A method for mechanically backgrinding a semiconductor wafer is known as mechanical abrasion. During this process, a grinding wheel 150 applies pressure to a semiconductor wafer 20 for a specified period of time. If the pressure readings are above a predetermined threshold, the grinding wheel 150 stops and adjusts its pressure applied to the wafer. If the readings are within the acceptable threshold, the back-grinding process continues.
In addition to reducing the wafer’s thickness, mechanical backgrinding improves productivity. Generally, a wafer is 750 mm thick to ensure mechanical stability and to prevent warping during high-temperature processing. To thin the wafer without causing damage, several methods are used. But back grinding is not without its risks. This process involves a high level of stress and can damage the wafers.
In this method, a grinding wheel 150 applies pressure to the backside 24 of a semiconductor wafer 20. During the process, sensor 112 measure the pressure applied to the wafer. The pressure measured above and below P is the difference between the initial pressure on sensors 112 and the pressure applied by the back grinding wheel 150. In addition, the initial pressure remains constant throughout the back-grinding process, making pressure control of the back-grinding wheel 150 essential.
Mechanical backgrinding is a process where a wafer is inserted on a chuck table and ground from the back. Some systems grind a single wafer while others grind multiple wafers simultaneously. Control of the process usually involves measuring the relevant parameters, including current and resistance. The current of the grinding wheel is measured in revolutions. This measure is a direct representation of the friction between the wheel and the wafer. Capacitance, on the other hand, measures the amount of resistance that the grinding wheel has on the wafer.
Poligrind
In semiconductor manufacturing, using Poligrind for wafer grinding is an environmentally friendly option that delivers excellent post-grinding surface quality and superior die strength. The process also minimizes environmental impact due to the use of non-chemical stress relief. Another DISCO wafer back grinding process is called TAIKO. Taiko, which means ‘drum,’ simplifies the handling of thin wafers and reduces warpage.
In semiconductor manufacturing, back grinding is an important step that reduces the thickness of a wafer, making it easier to package and stack integrated circuits. Wafers are typically around 750 mm in diameter and 200-300 mm thick, depending on the thickness desired for manufacturing. The thickness of the wafers is necessary to ensure minimum mechanical stability and avoid warping during high-temperature processing steps.
Apoligrind for wafer grinding is a mechanical tool that uses micro-abrasives to grind a 20-um-thick wafer. The wheel is compatible with a multi-wafer mounter and is capable of supporting the attachment of a DAF. The DISCO UltraPoligrind is also capable of performing DBG. In addition to wafer grinding, DISCO provides ultra polygrind, poligrind, and IF series of precision grinding tools.
The most common thinning method is mechanical grinding. This method is advantageous for its accuracy and high thinning rate. A diamond and resin-bonded grind wheel is used in conjunction with a high-speed spindle to remove material from wafers. The spindle speed is controlled by the grind recipe, which determines the rate at which material is removed. CMP is a less efficient process and leaves visible grind marks.
Chemical mechanical planarization
One method for achieving chemical mechanical planarization of wafers is through the use of a contact release capsule. The contact release capsule can help improve planarization efficiency and decrease undesirable etching or corrosion. In addition, the contact release capsule also offers greater dispersion stability. Chemical mechanical planarization has several advantages over conventional polishing methods. However, it may not be suitable for all materials. For these reasons, the present invention is particularly applicable to semiconductor wafers.
Coarse grinding
Back grinding is an abrasive process that can be used for various types of wafer processing. It is commonly used to reduce surface roughness, and it also removes surface damage from certain wafer types, such as gallium arsenide and indium phosphide. This process is conducted with a polishing pad that applies a small particle abrasive slurry to a wafer. Compared to mechanical grinding, CMP provides more planarization, but is less clean. The chemical slurry is applied to the wafer from above, and the polishing pad evenly distributes it to the surface.
In conventional coarse wafer grinding, a wafer 102 is mounted on a porous ceramic rotating vacuum chuck that faces the grinding wheel. The spindle of the chuck rotates together with the grinding wheel. Deionized water is jetted onto the workpiece to reduce thermal effects and wash away material particles that are generated during the grind. The wafer is then protected by a grinding tape. A conventional wafer grinding process consists of two steps: coarse grinding and thinning.
The new generation #8000 wheel delivers a smooth surface finish and reduces bow in ground wafers. It can replace the conventional #2000 wheel and improve the quality of ground wafers. The improved wafer quality reduces the need for post-grinding operations. Ultimately, improved yields can be achieved by using a state-of-the-art grinding process. But the process does not end there. A better abrasive wheel and a smoother surface are necessary for the best result.
Tests
In a semiconductor manufacturing facility, the process of back grinding is used to reduce the thickness of a semiconductor wafer. The process is used to reduce the thickness of the wafer in order to reduce the cost per semiconductor chip. However, the thinner a semiconductor wafer is, the lower its performance. The method of back grinding varies depending on the material used and the process variables. This article will review a few of these variables.
The backside of a background wafer displays a pattern of scratches. The size of the grit and the amount of vertical pressure applied during grinding determines the depth of the scratches. The deeper the scratches are, the greater the strength of the silicon. For this reason, it is important to avoid creating too many scratches on the backside of the wafer. However, back grinding can also be used to improve the strength of wafers that are too thin.
Applications
Wafer grinding is a method of flattening or polishing silicon wafers using a rotating abrasive member. The grinding wheel rotates as the chuck table moves, leaving a protective member 6 in contact with the back side of the wafer. The grinding process results in the back side of the wafer having an average surface roughness of 0.003 mm and a strain layer thickness of 0.05 mm.
The process is carried out in two steps. First, the abrasive members grind the wafer’s front side. After this, back grinding is carried out to separate the dies and reach the groove. Then, the abrasive member grinds the backside of the wafer. Finally, the abrasive member’s backside is polished to a smooth surface, achieving a high polish quality.
Moreover, backside thinning is an important part of IC device fabrication. This process reduces the thickness of silicon wafers to make it suitable for high-density packaging and stacking of integrated circuits. Silicon wafers are approximately 200-300 mm in diameter, and about 750 mm thick. Their thicker thickness is necessary to prevent the wafer from warping during high-temperature processing steps.
The report includes detailed information on the worldwide Wafer Grinding Machine market. It provides detailed information on various segments and their market size, including upstream raw materials and downstream applications. The report also discusses the major manufacturers and their share in the market, as well as their revenue, market size, and growth opportunities. It also identifies the leading companies and their products and details the company’s competitive landscape and key manufacturers in the industry. After providing a comprehensive analysis of the global Wafer Grinding Machine market, the report outlines the key factors driving growth in the market.